Russian Researchers Push X-Ray Lithography Toward 11.2 nm for Microchips

Russian scientists have advanced the field of X-ray lithography with a project that operates at extremely short wavelengths, a development highlighted by the press service of the National Center for Fusion Materials (NCFM). The breakthrough marks a notable milestone in the evolution of chip fabrication technologies that rely on light-driven patterning to sculpt intricate microstructures on semiconductor substrates. In modern semiconductor manufacturing, a photoresistable material is spread over a substrate and exposed to radiation through a patterned mask. Light in the visible, ultraviolet, or X-ray range alters the material’s properties, allowing the unexposed regions to be removed during development. This layer-by-layer approach creates complex networks of microscopic circuitry. A shorter radiation wavelength generally enables finer feature resolution and greater circuit density, which is why researchers continually push the boundaries of light sources for lithography.