The largest DRAM manufacturers Samsung Electronics, SK Hynix, and Micron are preparing for a major shift in the memory market. Industry sources indicate they could stop producing DDR3 and DDR4 modules in favor of DDR5 and high bandwidth memory, commonly known as HBM, by the end of 2025.
Phasing out older memory standards may push DDR3 and DDR4 into scarcity in the second half of 2025. Analysts warn that once production ends, supply will tighten and reliance on Taiwan’s Nanya Technology and Winbond will grow. Even these players may not be able to fully bridge the gap.
The move away from DDR3 and DDR4 is driven by a shift in industry priorities. Large manufacturers are directing more output to high speed memory for server solutions, artificial intelligence, and cloud computing. Winbond plans to migrate to a 16‑nanometer process, enabling the release of memory chips at 8 gigabits.
According to Nanya Technology, the DRAM market will bottom out in the first half of 2025, followed by a recovery as demand strengthens and inventories normalize. Looking ahead, DDR5 and HBM, offering higher bandwidth and improved energy efficiency, will attract the primary attention from buyers and suppliers alike.
While Samsung and SK Hynix plan to focus on rolling out advanced memory solutions, other firms like CXMT may attempt to enter the DDR4 market. However, experts doubt they can fully compensate for the exit of the largest players from older standards. The transition to DDR5 seems inevitable, and buyers may face higher prices and tighter availability in the coming years due to DDR3 and DDR4 constraints.
For purchasers in Canada and the United States, this shift translates into closer scrutiny of future memory purchases, potential price volatility, and longer lead times as suppliers adapt to the DDR5 era.