The world’s first diamond semiconductor that does not require cooling was created 14:28

Japanese scientists from the Electronic and Optical Materials Research Center of the National Institute of Materials Science (NIMS) have developed the world’s first diamond-based transistor. The device can operate at very high temperatures and requires almost no cooling compared to silicon analogues. The study was published in the scientific journal magazine Advanced Science (AdvSci).

According to experts, a diamond semiconductor can operate at temperatures above 300°C, while for silicon-based processors the limit is 100°C.

As part of the project, scientists created a transistor with two “phosphorus-doped diamond layers.” To increase conductivity, phosphorus doping or, more simply, an element must be added to the layers. In this way, an n-channel layer carrying free electrons is created, replacing the silicon layer in a conventional chip.

When enough electrons pass through the layer, it connects the two ends of the gate, known as the “source” and “drain”. This completes the circuit and switches the device from value 1 to value 0.

According to the authors of the development, the device they created provided the highest stability and conductivity at extremely high temperatures among existing analogues.

Diamond semiconductors have a wider band gap compared to silicon semiconductors. The band gap is measured in electron volts (eV) and is the region within the n channel where electrons can move freely. Wide bandgap means the component can operate at higher voltages and frequencies. Diamond has an indicator of 5.47 eV, while silicon has only 1.12 eV.

According to scientists, diamond processors will find application in technology for the most extreme conditions, including space. They can also be used in electric vehicles and other devices.

Previous scientists developed An almost indestructible material, it is second only to diamond in terms of hardness.