In MIFs, a new type of memory has been created to create the flash drives of the future with a breakthrough material.

Mift’s scientists have revealed how to develop the material to create new generation flash drivers. Discovery includes the use of segnetolectrics for the memory of flash drives – special materials that can change electrical polarization under the influence of an external electric field. This “Gazeta.ru” was told in MIPT.

Segotolectric films of Gafnia Oxid are the basis of new generation storage devices that will replace flash drives. Such a memory is much faster than the memory of ordinary flash cards, and it has a much longer service life when it comes to the number of possible records of recording and recording information. However, there are some disadvantages that must be eliminated before the mass application. For example, with rewriting multiple information, so -conded “memory window” changes – a series of values ​​that devices can correctly distinguish data and store data.

The reason for this is now a change in polarization of the film: it is initially quite small, but it gradually increases with multi -switching. Scientists call this phenomenon as “awakening” of segoteelectric. His physical nature was not yet clear.

“It turned out that the awakening of polarization is associated with a change in the structure of Oxit Gafniya films. The reason for these changes in the structure is the mechanical voltage that occurs during the processing of the film at a temperature of approximately 500 ° C when an amorphous film becomes crystal. The cage is “doner” to reduce this voltage, and this leads to an increase in polarization and the expansion of the memory window, ”says Laboratory President Anastasia Chuprik, the Laboratory Chairman of the promising concepts of data storage from MFTI.

The results of the study show that Gafni Oksidininin’s film should reduce the mechanical stress in it to give more polarizing. To obtain more complete information about the effect of conditions on the stability of the memory window for the production of a memory cell, scientists plan to investigate the effect of certain conditions on structural reconstruction.

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Source: Gazeta

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